Narrowband SSPA Modules 850 MHz–6 GHz | 20W to 200W CW RF Power Amplifiers

Our narrowband SSPA modules cover 850 MHz to 6 GHz frequency bands with CW output power from 20W to 200W. Designed for radar, telemetry, ISM, and communication systems, these frequency-optimized narrowband RF power amplifiers provide improved efficiency, gain performance, and thermal management compared with broadband RF amplifiers.

Operating from a standard 28V DC supply, these modules utilize band-optimized matching networks, high-voltage LDMOS and GaN transistor technology, and CNC-machined aluminum housings to deliver CW output power and pulsed RF operation from 20W (+43 dBm) to 200W (+53 dBm).

1. Engineering Advantages: Frequency-Optimized vs. Broadband Designs

Selecting a dedicated narrowband amplifier architecture offers distinct system-level performance advantages over wideband or multi-octave amplifiers:

• Maximized Power Added Efficiency (PAE): Broadband matching networks introduce reactive losses and compromise transistor load-line optimization. Narrowband input/output matching networks transform the transistor load impedance with minimal insertion loss, converting a greater portion of DC input power into useful RF output power.
• Higher Power Density in Compact Housings: Optimized impedance matching allows active transistor dies to operate closer to their optimized load conditions, improving device utilization and reducing thermal overhead while keeping module dimensions down to compact footprints (e.g., 150 × 90 × 25 mm).
• Improved Harmonic and Spurious Suppression: Band-pass matching networks provide inherent attenuation of out-of-band spurious signals and lower harmonic content compared to octave-bandwidth power amplifiers, reducing filtering requirements at the antenna interface.
• Stable Thermal Performance: Higher operational efficiency reduces internal heat dissipation per watt of RF output. Combined with copper baseplates and finned enclosure designs, thermal management remains straightforward while maintaining junction temperature margins within the device manufacturer’s recommended limits.

2. Technical Deep-Dive across Specific Frequency Allocations

Our frequency-optimized high-efficiency narrowband SSPA modules are engineered for targeted frequency bands across UHF, S-band, and C-band allocations.

UHF Band High-Gain Power Modules (850–930 MHz)

Operating in the 850–930 MHz range, modules like the MCW0890M50A and MCW0890M47A deliver 100W (+50 dBm) and 50W (+47 dBm) of RF output power respectively. Depending on the model, input drive levels can range from low-power signal sources (such as signal generators and transceiver front ends at approximately 0 dBm nominal) to higher-power driver stages. Operating at 28V DC with a current draw of 5A to 12A, they are suitable for ISM transmitters, RF test systems, and telemetry applications.

S-Band High-Power Transmitter Modules (2200–2700 MHz)

In radar, telemetry, and satellite communication systems, required RF output power typically increases due to higher path loss and link budget requirements. The MCW2400M53A provides 200W (+53 dBm) of output power across 2200–2500 MHz with 28 dB gain, drawing up to 24A from a 28V DC supply. For driver-stage or medium-power applications, the MCW2450M47A delivers 50W (+47 dBm) with 47 dB gain across 2200–2700 MHz in a compact 150 × 90 × 25 mm enclosure.

C-Band Radar & Telemetry Modules (5000–6000 MHz)

At higher microwave frequencies, maintaining gain flatness and power efficiency requires careful electromagnetic simulation and optimized PCB/microstrip layouts. The MCW5659M47A (5600–5900 MHz) delivers 50W (+47 dBm) output power with 47 dB gain and 10A current consumption at 28V DC. For wider C-band applications, the MCW5060M47A covers 5000–6000 MHz, providing 20W (+43 dBm) output power in a lightweight 160 × 90 × 25 mm aluminum housing.

3. Standard Product Specifications & Selection Matrix

The table below outlines our standard narrowband solid-state power amplifier module configurations, including typical drain efficiency at rated output power, gain flatness, and VSWR tolerances:

Note: Efficiency values in the table refer to typical drain efficiency measured at rated RF output power.

Model SKU	Frequency Range (MHz)	Output Power	Gain (dB)	Drain Efficiency (Typ., at Rated Power)	Gain Flatness	Input / Output VSWR	Operating Temperature	Dimensions (L × W × H, mm)
MCW0890M47A	850–930	50 W (+47 dBm)	47 dB	35%	±1.0 dB	≤2:1	-20°C to +55°C	180 × 80 × 25
MCW0890M50A	850–930	100 W (+50 dBm)	50 dB	30%	±1.2 dB	≤2:1	-20°C to +55°C	180 × 90 × 20
MCW2400M53A	2200–2500	200 W (+53 dBm)	28 dB	30%	±1.5 dB	≤2:1	-20°C to +55°C	200 × 150 × 30
MCW2450M47A	2200–2700	50 W (+47 dBm)	47 dB	30%	±1.0 dB	≤2:1	-20°C to +55°C	150 × 90 × 25
MCW5060M47A	5000–6000	20 W (+43 dBm)	47 dB	15%	±1.2 dB	≤2:1	-20°C to +55°C	160 × 90 × 25
MCW5659M47A	5600–5900	50 W (+47 dBm)	47 dB	18%	±1.0 dB	≤2:1	-20°C to +55°C	180 × 110 × 25

4. System Integration & Thermal Management Guidelines

Proper electrical and thermal integration is essential to ensure long-term reliability and rated RF output performance:

Thermal Interface & Forced-Air Cooling

High-power SSPA modules operating at 100W or 200W output levels generate substantial DC power dissipation. For example, a 200W RF amplifier operating at 28V/24A may dissipate several hundred watts of heat depending on operating efficiency and duty cycle. Modules must be flat-mounted to a machined copper or aluminum heat sink with thermally conductive grease or indium foil. Forced-air cooling or cold-plate liquid cooling must maintain baseplate temperatures below +65°C during continuous transmission.

DC Power Supply Requirements

DC power supplies must be sized to handle peak operating current plus transient surge currents during RF turn-on. Low-ESR bypass capacitors should be placed close to the amplifier DC supply terminals to prevent voltage droop under pulsed RF drive conditions.

Load VSWR & Output Mismatch Protection

While modules are tested against typical load mismatches, operating into high-VSWR loads (e.g., mismatched antennas or open/shorted feedlines) can cause reflected power to stress output transistors. Integrating an external RF isolator or circulator at the output SMA connector is recommended for high-power field installations.

5. Custom RF Power Amplifier Development & OEM Modifications

We provide custom RF power amplifier development for OEM applications requiring specific frequency bands, output power levels, and mechanical configurations. Custom units are typically available within 3–4 weeks depending on customization requirements:

• Custom Frequency Band Tuning: Custom frequency coverage can be developed from 10 MHz to 18 GHz depending on output power requirements, semiconductor technology, and bandwidth targets with narrow fractional bandwidths (typically 5%–15%).
• Flexible Bias Voltage Options: Standard 28V DC designs can be adapted for 50V DC GaN topologies or 12V/24V mobile DC power systems.
• Integrated Control Functions: Optional integrated RF enable/gate control for fast pulsing, forward/reverse power detection, and over-temperature shutdown circuitry.
• Custom Enclosures & Connectors: CNC-machined aluminum housings with SMA, N-Type, or TNC connectors and custom mounting hole configurations.

Request Engineering Evaluation & Datasheets

Need technical documentation, S-parameter files, or evaluation samples for your transmitter build?

• Request Full Engineering Datasheets (PDF)
• Request S-Parameter (.s2p) Test Files
• Request Prototype Evaluation Units
• Contact RF Application Engineering

Frequently Asked Questions

Q1: What is the main advantage of choosing a narrowband SSPA over a broadband power amplifier?

Narrowband SSPAs achieve higher Power Added Efficiency (PAE), higher output power density, and better out-of-band harmonic rejection within their optimized operating frequency band compared to wideband amplifiers.

Q2: Can these narrowband modules be operated in pulsed RF modes as well as continuous wave (CW)?

Yes. Modules can operate in both CW and pulsed modes. For applications requiring fast RF switching or low duty-cycle pulse modulation, custom fast-enable gate control circuitry can be integrated upon request.

Q3: How should the heat sink be sized for a 200W output SSPA module like the MCW2400M53A?

At 200W RF output with a 28V/24A DC input (672W peak DC power input), approximately 450W to 470W of heat may need to be dissipated depending on operating conditions, drive level, and duty cycle. The heat sink and forced-air cooling system must be designed with a thermal resistance low enough to keep the amplifier baseplate temperature below +65°C.

Q4: What frequency ranges are available for custom narrowband SSPA designs?

Our engineering team can design custom solid-state power amplifier modules spanning frequencies from 10 MHz up to 18 GHz, tailoring the passband and output matching to specific narrow fractional bandwidth requirements.

Q5: What is the difference between GaN and LDMOS technology in narrowband SSPAs?

LDMOS technology provides robust thermal stability and cost-effectiveness for UHF and lower S-band frequencies (typically below 3–4 GHz) at higher power levels. Gallium Nitride (GaN) offers higher power density, higher breakdown voltage, and improved efficiency at microwave frequencies, making it suitable for C-band and higher-frequency applications.

Q6: Can these modules be integrated into existing RF transmitters?

Yes. Featuring compact aluminum housing footprints and standard 28V DC bias interfaces, these SSPA modules are designed for seamless integration into legacy or custom RF transmitter chassis, test systems, and communication platforms.